Technique for attaching die to leads

ABSTRACT

A semiconductor die assembly comprising a semiconductor die with bond pads, a plurality of leads which extends across the semiconductor die and terminates over its respective bond pads, and an alpha barrier preferably positioned between the leads and the semiconductor die. Electrical connection is made between the leads and their respective bond pads by a strip of anisotropically conductive elastomeric material, preferably a multi-layer laminate consisting of alternating parallel sheets of a conductive foil and an insulating elastomer wherein the laminate layers are oriented perpendicular to both the bond pad and the lead, positioned between the leads and the bond pads. A burn-in die according to the present invention is also disclosed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 09/047,025,filed Mar. 24, 1998, now U.S. Pat. No. 6,069,028, issued May 30, 2000,which is a continuation of application Ser. No. 08/581,776, filed Jan.2, 1996, now U.S. Pat. No. 5,807,767, issued Sep. 15, 1998.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an improved method for the electricalattachment of a semiconductor die to the leads of a lead frame and theapparatus formed therefrom. More particularly, the present inventionrelates to the use of multi-layered or laterally-segmentedmetal/elastomer strips to achieve electrical contact between the bondpads of a semiconductor die and the leads of a lead frame or otherconductor pattern in order to eliminate the necessity for wirebonding ordirect lead bonding (TAB) to the semiconductor die.

2. Background Art

The most common die-connection technology in the microelectronicsindustry is wirebonding. As illustrated in FIG. 6, wirebonding generallystarts with a semiconductor die 30 bonded by a die-attach adhesive suchas a solder or an epoxy to a lead frame paddle or to a discretesubstrate 128. A plurality of bond wires 32 is then placed, one at atime, to electrically connect the bond pads 34 to their correspondingleads 36. One end of each bond wire is attached to a bond pad 34 of thesemiconductor die 30, and the other bond wire end is attached to a lead36.

The bond wires 32 are attached through one of three industry standardwirebonding techniques: ultrasonic bonding—using a combination ofpressure and ultrasonic vibration bursts to form a metallurgical coldweld, resulting in a so-called wedge—wedge wire bond; thermocompressionbonding—using a combination of pressure and elevated temperature to forma weld, resulting in a so-called ball-wedge wire bond; and thermosonicbonding—using a combination of pressure, elevated temperature, andultrasonic vibration bursts, resulting in a ball-wedge bond similar tothat achieved by thermocompression bonding. Although these wirebondingtechniques accomplish the goal of forming electrical contact between thesemiconductor die 30 (i.e. through the bond pads 34) and each lead 36,all of these techniques have the drawback of requiring very expensive,high precision, high speed machinery to attach the individual bond wires32 between the individual bond pads 34 and the leads 36. Moreover, thepreferred bond wire material is gold, which becomes extremely expensivefor the vast quantities employed in commercial semiconductorfabrication. Other materials employed in the art, such as silver,aluminum/silicon, aluminum/magnesium, and palladium, while lessexpensive than gold, still contribute significantly to the cost ofachieving die/lead frame electrical connections.

U.S. Pat. No. 4,862,245 issued Aug. 29, 1989 to Pashby et al.illustrates an alternate lead arrangement on the semiconductor die (seeFIG. 7). The leads 46 are extended over a semiconductor die 40 (“leadsover chip” or LOC) toward a central or axial line of bond pads 44wherein bond wires 42 make the electrical connection between the innerends of leads 46 and the bond pads 44. Film-type alpha barriers 48 areprovided between the semiconductor die 40 and the leads 46, and areadhered to both, thus eliminating the need for a separate die paddle orother die support aside from the leads 46 themselves. The configurationof the '245 patent assists in limiting the ingress of corrosiveenvironmental contaminants to the active surface of the die, achieves alarger portion of the circuit path length encapsulated in the packagingmaterial applied after wire bonding, and reduces electrical resistancecaused by the bond wires 42 by placing the lead ends in closer proximityto the bond pads (i.e. the longer the bond wire, the higher theresistance). Although this configuration offers certain advantages, itstill requires that bond wires 42 be individually attached between thebond pads 44 and the leads 46.

U.S. Pat. No. 5,252,853 issued Oct. 12, 1993 to Michii, illustrates aconfiguration similar to U.S. Pat. No. 4,862,245 discussed above.However, the lead is further extended to a position over the bond padwherein the lead is bonded directly to the bond pad (TAB). Although thisdirect bonding of the lead to the bond pad eliminates the need forwirebonding, it still requires expensive, highly precise equipment tosecure the bond between each lead and its corresponding bond pad.

U.S. Pat. No. 5,140,405, issued Aug. 18, 1992 to King et al., addressesthe problem of connecting dies to leads by placing a plurality ofsemiconductor dies in a housing which is clamped to a plate havingconductive pads and leads which are precisely aligned with the terminalsof the semiconductor dies. A sheet of anisotropically conductiveelastomeric material is interposed between the housing and the plate tomake electrical contact. The anisotropically conductive elastomericmaterial is electrically conductive in a direction across its thickness,but non-conductive across its length and width, such as materialgenerally known as an “elastomeric single axis conductive interconnect”,or ECPI.

Although the technique of achieving electrical contact between thesemiconductor dies and the leads in U.S. Pat. No. 5,140,405 is effectivefor a plurality of chips, the scheme as taught by the '405 patent isill-suited for the production of single chips in commercial quantities.The requirement for a housing and the use of a conductive sheet whichcovers both the housing surface and the semiconductor dies is simply notcost effective when translated to mass production, single-chip conductorattachment or conductor attachment on less than a substantiallywafer-scale.

A further industry problem relates to burn-in testing of semiconductordies. Burn-in is a reliability test of semiconductor dies to identifydies which are demonstrably defective as fabricated, or which would failprematurely after a short period of proper function. Thus, the die issubjected to an initial heavy duty cycle which elicits latent silicondefects. The typical burn-in process consists of biasing the deviceagainst a circuit board or burn-in die, wherein the device is subject toan elevated voltage load while in an oven at temperatures of betweenabout 125-150° C. for approximately 24-48 hours.

A burn-in die generally comprises a sheet of polyimide film laminated tocopper foil leads with electrolytically plated metal bumps which extendfrom the surface of the polyimide film through vias to the copper foilleads. However, the industry standard process for electrolyticallyplating bumps generally results in different circuit intensities to eachcopper foil lead on the burn-in die due to the use of individual tiebars as electrical paths between a bus bar and the bump ends of theleads disposed in the plating bath. The differences in circuitintensities caused by the variable cross-sections of the tie barsextending to each copper foil lead result in the plated bumps beingnon-uniform in diameter and height. The differences in bump diameter andheight consequently make uniform contact with the terminals on thesemiconductor dies to be tested much more difficult. In general, theconnection between the semiconductor die and the burn-in die isnon-permanent, wherein the semiconductor die is biased with a spring orthe like in the burn-in die such that the bond pads on the semiconductordie contact the plated bumps. Thus, even minor variations between theplated bump heights may result in one or more die terminals failing tomake contact with one or more plated bumps. This lack of contact willresult in a portion of the semiconductor device not being under avoltage load during the burn-in process. Thus, if a latent silicondefect exists in this portion of the semiconductor device, the burn-inprocess will not be effective, and the die cannot be effectivelyelectrically tested in the region where the open circuit exists.

U.S. Pat. No. 5,408,190, issued Apr. 18, 1995 to Wood et al., disclosesthe use of a Z-axis anisotropic conductive sheet of material toelectrically connect the bond pads of a die to an intermediate substrateemployed in a burn-in assembly for a bare dice. However, it appears thata sheet of the anisotropically conductive material is disposed over theentire die and, in some instances, the anisotropically conductive sheetis used in combination with wire bonds extending from the intermediatesubstrate to the carrier.

Therefore, it would be advantageous to develop a technique forefficiently attaching dies to leads which eliminates the wirebondingprocess step or any other equivalent procedure requiring precisealignment of a lead end and bond pad or other die terminal. Further, itwould also be advantageous to develop a technique for quickly andefficiently making non-permanent contact between semiconductor dies andburn-in dies which would alleviate the need for close dimensionalcontrol of burn-in die contacts and for continuous, precise biasedcontact of the die under test (DUT) and the burn-in die.

SUMMARY OF THE INVENTION

The present invention relates to a novel and unobvious technique forelectrical attachment (either permanently or non-permanently) of asemiconductor die to the respective leads of a lead frame or otherconductor array, and further relates to a semiconductor die assembly anda burn-in die formed using this technique.

The present invention comprises a semiconductor die, preferably with itsrespective bond pads in a linear arrangement, and a plurality of leadsof a lead frame or other conductor array, which leads extend across thesemiconductor die and terminate over (above) their correspondingsemiconductor die bond pads. The inner ends of the leads may be of anysuitable configuration, including pads which are enhanced withdownwardly extending flanges. Electrical connection is made between theleads and their respective bond pads by an elongated strip ofanisotropically conductive elastomeric material positioned andcompressed between the leads and the semiconductor die. As used herein,the term “anisotropically conductive elastomeric material” means andincludes a material conductive in a direction transverse to thelongitudinal axis or direction of elongation of the strip, but not inthe direction of elongation.

The conductive strip is preferably a multi-layer laminate consisting ofalternating parallel sheets of a conductive foil and an insulatingelastomer, wherein the laminate layers are oriented perpendicular to theplanes of both the bond pad and the lead. Thus, the conductive strip iselectrically conductive in a direction across its thickness and width(i.e. between the lead and bond pad), but non-conductive across itslength (i.e. insulated from electric cross-over between adjacent bondpads or leads). The conductive foil may be any suitable electricallyconductive material, such as gold, copper, gold/copper, silver,aluminum, or the like. The insulating elastomer can be any material withinsulative properties sufficient to prevent electron flow between theseparated, parallel sheets of the conductive foil. The elastomer must becapable of maintaining its resiliency over all anticipated temperatureranges to be encountered by the assembly. A variety of elastomericcompounds as known in the art is suitable.

The number of laminated conductive foils per unit length of the strip,or foil density, must be high enough to form at least one electricallyconductive path across each lead/bond pad connection. Preferably, thedensity of the conductive foils forms two or more conductive paths so asto insure that at least one conductive foil is achieving electricalcommunication across the lead/bond pad connection.

It is, of course, understood that other available materials havingequivalent directional-specific conductive properties can be utilized inplace of the conductive strip described, such as material previouslyreferenced and generally known as an “elastomeric single axis conductiveinterconnect”, or ECPI.

In a further aspect of the invention, a dielectric or insulative tape ispositioned as an alpha barrier between the leads and the semiconductordie to prevent false electronic gate activations or deactivations due toresidual impurities in the encapsulation material employed to packagethe die after electrical connection of the leads, and to insulate theactive or main surface of the die from the leads. The insulative tape isattached to the semiconductor die and to the leads with appropriateadhesive layers as known in the art. Preferably, the insulative tape hasproperties which are conducive to the semiconductor environment. Thus,the polymeric film preferably has a melting temperature in excess of175° C. and does not contain ionizable contaminants such as halides andactive metals including sodium, potassium and phosphorus. Polyimidefilms, such as duPont Kapton™, possess the appropriate properties andcan be used as an effective alpha barrier insulative tape. The adhesiveattachment of the leads to the die through the tape results in precisemaintenance of lead position and simultaneous, elastomerically-biased,lead-to-bond pad electrical connection of all leads of a lead frame orother conductor pattern.

A primary advantage of the present invention is the elimination of thenecessity for bond wires. The present invention requires no expensive,high precision, high speed machinery to attach the bond wires to theindividual bond pads and leads. Furthermore, all electrical connectionsbetween the leads and the semiconductor die are simultaneously andadhesively made at ambient temperature upon the contact of theconductive strip with the leads and semiconductor die. Thissubstantially reduces the amount of production time required which, inturn, reduces production costs.

The present invention also has further advantages over both wirebondingor directly bonding the lead to the bond pads. Different thermalcoefficients of expansion of the different materials employed in theprior art processes such as TAB result in different rates of thermalexpansion and contraction for different elements of the semiconductordie conductive paths when power to the semiconductor die is turned onand off. The differences in thermal coefficients of expansion causepushing and pulling strains on the components of the semiconductor die.These strains can cause the bond wires or TAB bonds to fatigue andbreak. However, since the contact between the leads and the bond pads ofthe present invention is substantially elastic, temperature compensationcharacteristics of the conductive foil-containing elastomer maintaincontact between the leads and the bond pads without fatigue.Furthermore, the elastic qualities of the elastomer allow it toeffectively conform to different shaped surfaces, such as the bond padsbeing either protrusions from the die surface or depressions or recessesin a passivating layer.

The present invention is also advantageous for use in burn-in dies. Aspreviously discussed, the standard burn-in die comprises a sheet ofpolyimide film laminated to copper foil leads with electrolyticallyplated metal bumps which extend from the surface of the polyimide filmthrough vias to the copper foil leads. However, the electrolytic bumpforming process results in the plated bumps being non-uniform indiameter and height. The differences in bump diameter and height makeuniform contact with the terminals on the DUT's much more difficult.

The present invention solves the contact problem with burn-in dies. Whenthe semiconductor die in a fixture is placed on the burn-in die andbiased with a spring or the like, the conductive strip makesnon-permanent contact with the bond pads of the semiconductor die. Sincethe conductive strip is elastic, the DUT makes proper contact with itsrespective lead. Thus, the use of plated bumps is completely eliminatedand, along with it, the problem of non-uniform bump heights.Furthermore, the present invention does not require as high a precisionplacement of the semiconductor die on the burn-in die. Thecharacteristics of the multi-layer elastomer allow some variation in theorientation of the semiconductor die while still achieving properelectrical contact between the semiconductor die and the burn-in dieends.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming that which is regarded as the present invention,the advantages of this invention can be more readily ascertained fromthe following description of the invention when read in conjunction withthe accompanying drawings in which:

FIG. 1 is a top view of a semiconductor die assembly of the presentinvention;

FIG. 2 is a cross-sectional view of the assembly of the presentinvention along line 2—2 of FIG. 1;

FIG. 3 is a partial plan view of an assembly of the present inventiontaken from one end of the die assembly;

FIG. 4 is a top view of an alternate assembly of the present inventionincluding bus elements on the lead frame;

FIG. 5 is a cross-sectional view of the alternate assembly of thepresent invention along line 5—5 of FIG. 4;

FIG. 6 is a top view of a prior art semiconductor die assembly usingbond wires to connect the leads to the bond pads prior to encapsulationof the semiconductor die in a protective coating;

FIG. 7 is a top view of a prior art semiconductor die assembly usingleads extending onto the semiconductor die using bond wires to connectthe leads to the bond pads prior to encapsulation of the semiconductordie in a protective coating; and

FIG. 8 is a schematic side elevation of a burn-in die according to thepresent invention with a DUT in place for testing.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1-3 illustrate an assembly 10 of the present invention. Theassembly 10 comprises a semiconductor die 18 with its respective bondpads 24. One or more leads 12 extend across the semiconductor die 18 andterminate in an appropriate position over their respective bond pads 24.

Interposed between the leads 12 and the semiconductor die 18 is a stripof anisotropically conductive elastomeric material 16. In theillustrated embodiment, the conductive strip 16 is constructed ofalternating sheets of a conductive foil 22 and an insulating elastomer20 comprising a laminate (FIG. 2). Thus, the conductive strip 16 iselectrically conductive in a direction across its thickness and width,but non-conductive along its length. The conductive foil 22 may be anysuitable electrically conductive material, such as gold, copper,gold/copper, silver, aluminum, alloys of any of the foregoing, or thelike. The insulating elastomer 20 can be any material with insulativeproperties sufficient to prevent substantial electron flow between theseparate adjacent sheets of conductive foil 22 (e.g., will not short),and which will maintain its resiliency at all anticipated operatingtemperatures (including burn-in, if desired) of the assembly.Silicone-based elastomers are particularly suitable for highertemperature environments such as burn-in. Natural elastomers (naturalrubber compounds) may be employed but are not preferred. Urethanes maybe suitable due to the ease with which the resiliency (durometer) may beadjusted. Such anisotropically conductive elastomeric material strip 16is a commercial product available from several sources. It is, ofcourse, understood that other available materials having equivalentconductive properties can be utilized in place of the conductive stripdescribed, such as the previously-referenced material generally known asan “elastomeric single axis conductive interconnect”, or ECPI.

Each conductive foil 22 forms a conductive path through the insulatingelastomer 20 to electrically connect the bond pad 24 with the lead 12.The density, spacing or pitch of the conductive foils 22 should besufficient to present at least one conductive path across each lead12/bond pad 24 connection. However, preferably the density of theconductive foils 22 present two or more conductive paths across eachlead 12/bond pad 24 connection to insure that at least one conductivefoil is achieving electrical communication across the lead 12/bond pad24 connection. Additionally, conductive adhesive as known in the art maybe placed on each bond pad 24 to insure a good electrical connectionbetween the conductive foil 22 and the bond pad 24. Therefore, thepresent invention requires no elevated heat or significant pressure toform the electrical connection between the lead 12 and bond pad 24.

Preferably, an insulative tape 14 is disposed between the leads 12 andthe semiconductor die 18 in predetermined areas to act as an alphabarrier to prevent false electronic gate activations or deactivationsdue to impurities in the plastic encapsulation material applied to thedie assembly, or shorting on the active or main surface of the die dueto the close proximity of the leads 12 to the semiconductor die 18. Theinsulative tape 14 is attached to the semiconductor die 18 with anappropriate adhesive 13 known in the art, as well as attached to theleads 12 with an appropriate adhesive 15 known in the art. Preferably,the insulative tape has properties which are conducive to thesemiconductor environment. Thus, the polymeric film preferably has amelting temperature in excess of 175° C. and does not contain ionizablecontaminants such as halides and active metals including sodium,potassium and phosphorus. Polyimide films, such as duPont Kapton™,possess the appropriate properties and can be used as an effective alphabarrier insulative tape. It is also contemplated that a spray-on orspin-on layer of dielectric may be employed in lieu of a tape or film,but this alternative is less preferred.

FIG. 3 illustrates a further embodiment of the present invention. Thelead 12 has a dual plateau arrangement wherein the lead 12 forms a firstplateau 26 which is substantially parallel to a top surface 27 ofsemiconductor die 18. This arrangement allows the first, lower plateau26 to be adhered to the semiconductor die top surface 27. Preferably,the first plateau 26 is adhered to the insulative tape 14 which is inturn adhered to the semiconductor die top surface 27.

In extending toward the bond pad 24, the lead 12 rises from the firstplateau 26 to a second plateau 28. The second plateau 28 issubstantially parallel to the bond pad 24 on the semiconductor die 18.As discussed above, the conductive strip 16 is conductively adheredbetween the lead 12 (i.e. second plateau 28) and the semiconductor die18 (i.e. bond pad 24). The vertical distance D between the secondplateau 28 and the underlying bond pad 24 is designed to conform to thethickness and elasticity of the conductive strip 16 and insurecontinuous, resilient electrical contact of bond pad 24 and lead 12under all anticipated operating temperatures while not placing unduestress on the lead frame/die assembly. If the distance D is too small, atorque arm is created which may push the lead 12 upwardly and away fromits adhesive connection to semiconductor die 18. If the distance D istoo large, the conductive strip 16 may be pulled upon expansion of lead12 from its adhesive connection between the lead 12 and/or thesemiconductor die 18, creating an open circuit.

FIG. 3 also shows the bond pads 24 in recesses. The recessed bond pads24 can be formed by etching through a shielding layer of passivationmaterial such as a low eutectic glass (as BPSG) or other material knownin the art to expose the pad ends of the circuit traces. This eliminatesa potential fabrication step of forming bumps or raised areas for thebond pads 24. The resilient nature of conductive strip 16 will conformto the recesses for contact with the bond pads 24.

FIGS. 4 and 5 illustrate a top view and a cross-sectional view,respectively, of another embodiment of the present invention. Anassembly 50 comprises a semiconductor die 52 with rows of bond pads 54a, 54 b, 56, and 58. A plurality of leads 56′ extends across thesemiconductor die 52 and terminates in an appropriate position over itsrespective bond pads 54 a and 54 b. The assembly 50 also includes ashared power lead 62 having a bus portion 64 which extends along the rowof bond pads 56. The assembly 50 further includes a shared ground lead66, formed in substantially the same shape as the shared power lead 62,having a bus portion 68 which extends along the row of bond pads 58.

Interposed between the leads 56′ and each row of bond pads 54 a and 54 bis a strip of anisotropically conductive elastomeric material 70 a and70 b. Additionally, the assembly 50 includes a strip of anisotropicallyconductive elastomeric material 72 interposed between power lead bus 64and bond pads 56, and a strip of anisotropically conductive elastomericmaterial 74 interposed between ground lead bus portion 68 and bond pads58.

Preferably, insulative tapes 76 and 78 are adhesively attached over thesemiconductor die 52 and under the leads 56′. The insulative tape 76 isalso attached to the semiconductor die 52 and the power lead 62, and theinsulative tape 78 is also attached to the semiconductor die 52 and theground lead 66.

It should be noted that the leads/strip/die assembly may be conformallycoated with an insulative coating subsequent to assembly to enhance themutual electrical isolation of the connections made, and to protect theassembly and the leads from displacement during a subsequent transfermolding process, wherein the assembly is packaged in plastic.

It is also possible to locate the leads over the die and conductivestrips without the use of an interposed insulative tape, and to apply aconformal insulative coating to and between the leads/strip/die assemblyto adhere the leads to the die.

FIG. 8 schematically illustrates the use of anisotropically conductiveelastomeric material strips 102 and 104 on the upper surface of aburn-in die or substrate 100 with the bond pads 106 of a “flipped”semiconductor die 108 pressed against the strips 102 and 104 by abiasing element such as leaf spring 110. Strips 102 and 104 are adheredto the face of the burn-in die with a conductive adhesive 112 to preventseparation therefrom after burn-in when die 108 is removed. Circuittraces 114 extend from the periphery of burn-in die substrate 100 totrace ends 116 under strips 102 and 104. Circuit traces 114 may resideon the upper surface of the substrate 100 as shown, extend through vias118 (broken lines) to the opposite side and then to the substrateperiphery, or be formed within the substrate 100, as where substrate 100is a film/trace/film laminate as known in the art.

Although the illustrated embodiment shows the connection of leads or aburn-in die to a semiconductor die, it is, of course, understood thatthe present invention can adapted to a multitude of other arrangementsfor securing an electrical connection between the bond pads or otherterminals of a semiconductor die and any type of conductor array usedtherewith.

Having thus described in detail preferred embodiments of the presentinvention, it is to be understood that the invention defined by theappended claims is not to be limited by particular details set forth inthe above description as many apparent variations thereof are possiblewithout departing from the spirit or scope thereof.

What is claimed is:
 1. A method of connecting a semiconductor die to alead of a lead frame comprising: providing said semiconductor die havingat least one bond pad on a surface of said semiconductor die; disposinga plurality of leads of said lead frame over said semiconductor diewherein at least one of said plurality of leads extends over the atleast one bond pad; and connecting an elongated strip of anisotropicallyconductive elastomeric material between said at least one bond pad andsaid at least one lead of said plurality of leads.
 2. The method ofclaim 1, wherein the elongated strip of anisotropically conductiveelastomeric material is adhesively, conductively bonded to said at leastone bond pad.
 3. The method of claim 1, wherein the elongated strip ofanisotropically conductive elastomeric material is non-conductive in adirection of its elongation.
 4. The method of claim 3, wherein theelongated strip of anisotropically conductive elastomeric materialcomprises a laminate of alternating, substantially parallel sheets of aconductive foil and segments of an insulating elastomer.
 5. The methodof claim 4, wherein the conductive foil is a metal.
 6. The method ofclaim 5, wherein the metal is selected from the group comprising:copper, gold, silver, aluminum and alloys thereof.
 7. The method ofclaim 4, wherein the insulating elastomer prevents substantialelectrical contact between adjacent sheets of the conductive foil. 8.The method of claim 7, wherein the insulating elastomer is selected fromthe group comprising synthetic elastomers and natural elastomers.
 9. Themethod of claim 1, further comprising adhering an insulative tapebetween the plurality of leads and said surface of said semiconductordie.
 10. The method of claim 1, wherein said plurality of leads eachhave a first plateau and a second plateau, wherein the first plateau ispositioned over and is attached to said surface of said semiconductordie, and wherein said second plateau is positioned over said at leastone bond pad and said elongated strip of anisotropically conductiveelastomeric material is secured between said second plateau and said atleast one bond pad.
 11. The method of claim 1, further comprising:providing a shared power lead with a bus and a set of power lead bondpads on said semiconductor die arranged in a row on said surface of saidsemiconductor die, wherein the bus is disposed above the set of powerlead bond pads with a strip of anisotropically conductive elastomericmaterial secured between said set of power lead bond pads and saidshared power lead bus; and providing a shared ground lead with a bus anda set of ground lead bond pads on said semiconductor die arranged in arow on said surface, wherein the bus is disposed above the set of groundlead bond pads with a strip of anisotropically conductive elastomericmaterial secured between said set of ground lead bond pads and saidshared ground lead bus.
 12. A method of attaching a semiconductor diefor the burn-in testing thereof comprising: providing at least onecircuit trace mounted to a substrate and terminating in at least onepattern of at least one trace end on a surface of said substrate;configuring said at least one trace end pattern to correspond to apattern of at least one bond pad on a semiconductor die to be tested;and contacting said at least one trace end pattern on said substratesurface with an elongated strip of anisotropically conductiveelastomeric material.
 13. The method of claim 12, wherein the elongatedstrip of anisotropically conductive elastomeric material is adhesively,conductively bonded to said at least one trace end pattern.
 14. Themethod of claim 12, wherein the elongated strip of anisotropicallyconductive elastomeric material is non-conductive in a direction of itselongation.
 15. The method of claim 14, wherein the elongated strip ofanisotropically conductive elastomeric material comprises alternatinglaminated sheets of conductive foil and insulating elastomer.
 16. Themethod of claim 15, wherein the conductive foil is a metal.
 17. Themethod of claim 16, wherein the metal is selected from the groupcomprising: copper, gold, silver, aluminum and alloys thereof.
 18. Themethod of claim 15, wherein the insulating elastomer preventssubstantial electrical connection between adjacent sheets of theconductive foil.
 19. The method of claim 18, wherein the insulatingelastomer is selected from the group comprising synthetic elastomers andnatural elastomers.
 20. The method of claim 1, wherein the elongatedstrip of anisotropically conductive elastomer material is conductive ina direction substantially lateral to the elongation of the strip. 21.The method of claim 12, wherein the elongated strip of anisotropicallyconductive elastomer material is conductive in a direction substantiallylateral to the elongation of the strip.